Confined plasmons in shallow etched quantum wires

摘要

Resonant Raman scattering and FIR transmission spectroscopy is used to detect confined plasmons in shallow etched GaAs/AlGaAs single quantum well wires. Different samples with varying period lengths and wire widths are investigated. The lateral potential modulation can be estimated by analysing spatially direct and indirect luminescence. We find deviations from the simple model that uses a 2D plasmon dispersion relation and wavevectors corresponding to integral numbers of half wavelengths in the confined region.