Interface investigation using transparent conductorhyphen;oxidehyphen;silicon structures

摘要

Transparent conductorhyphen;oxidehyphen;silicon (TCOS) structures were fabricated, with oxide thicknesses ranging between 0 and 400 Aring;, by depositing indium oxide by spray hydrolysis on thermally oxidized silicon. Measurements and analysis show that the TCOS structures possess admittance characteristics identical to those of metalhyphen;oxide semiconductor. Hence, degenerate oxide semiconductors such as SnO2and In2O3, are superior to semitransparent metals as the transparent gate for the application of optical illumination to extending the capability of the surface admittance techniques, especially in case of thin oxide structures with measurable leakage currents. A procedure has been outlined for obtaining the interface state density distribution from the capacitancehyphen;voltage characteristics measured under illumination.