Optical studies of Cd1minus;xMnxTe films grown on (001)InSb by pulsed laser evaporation and epitaxy

摘要

Photoluminescence, photoreflectance, and photovoltaic measurements have been used to characterize Cd1minus;xMnxTe (CMT) epilayers, 0.5ndash;1.4 mgr;m thick, grown on (001) InSb by pulsed laser evaporation and epitaxy. The measurements indicate highhyphen;quality epilayers comparable to the best bulk CMT or of CMT grown by molecular beam epitaxy. In some cases, a small gradient of Mn composition along the epilayer thickness is indicated by the photoreflectance data.