Orientation of YBa2Cu3O7minus;xfilms on unbuffered and CeO2hyphen;buffered yttriahyphen;stabilized zirconia substrates

摘要

YBa2Cu3O7minus;x(YBCO) films deposited by pulsed laser ablation on unbuffered and CeO2hyphen;buffered yttriahyphen;stabilized zirconia (YSZ) substrates were studied by xhyphen;ray diffraction and transmission electron microscopy to investigate film orientation. From fgr; scans it was determined that the unbuffered films possess two major inhyphen;plane orientation relationships with the substrate. Both have (001)YBCOpar;(001)YSZ, with either lsqb;100rsqb;YBCOpar;lsqb;100rsqb;YSZor lsqb;110rsqb;YBCOpar;lsqb;100rsqb;YSZ, a 0deg; or 45deg; orientation, respectively. As deposition temperature increases, satellite peaks that straddle the 0deg; or 45deg; orientations develop. The Sgr; boundary and near coincident site lattice descriptions are applied to the discussion of these misorientations. In general the CeO2hyphen;buffered YBCO films align with to the 45deg; orientation to the CeO2buffer layer. Outhyphen;ofhyphen;plane film orientation was investigated for both unbuffered and CeO2hyphen;buffered YBCO films and expressed as a ratio of the amount ofcperp; material toaperp; material. Buffered films exhibitedcperp; material toaperp; material ratios approximately twice those of unbuffered films. Transmission electron microscopy combined with the xhyphen;ray data was used to develop an explanation for the trends in the variation of thecperp;/aperp; ratio with film deposition temperature.