Formation of Alhyphen;nitride films at room temperature by nitrogen ion implantation into aluminum

摘要

A new method is demonstrated for the preparation of thin aluminum nitride layers using the direct nitridation aluminum by lowhyphen;energy nitrogen ion implantation in the ion energy range 0.5hyphen;5 keV. The Alhyphen;nitride films were obtained at room temperature without any thermal annealing. For the first time Alhyphen;nitride was studied with Auger electron spectroscopy (AES) and lowhyphen;energy electronhyphen;loss spectroscopy (ELS) and the corresponding spectra, together with those of Al and Al2O3, are presented. An electron energyhyphen;level scheme for Alhyphen;nitride was derived from the AlLvvAuger spectra, from the valence electron excitation spectra, and from the Al(2p) andN(ls) core electron excitation spectra measured by ELS.