Characterization of pseudomorphic InGaAs channel modulationhyphen;doped fieldhyphen;effecthyphen;transistor structures grown by molecularhyphen;beam epitaxy

摘要

This paper compares Hallhyphen;effect measurements combined with rapid thermal annealing (RTA) and lowhyphen;temperature photoluminescence (4hyphen;K PL) as characterization techniques for the optimization of the growth of pseudomorphic InGaAs channel modulationhyphen;doped fieldhyphen;effecthyphen;transistor structures. The Hallhyphen;effect measurements with the RTA were used to determine the optimized growth temperature. 4hyphen;K PL was used to determine the quality of the InGaAs quantum well and the In mole fraction.