Twohyphen;beam laser recrystallization of polycrystalline silicon on an insulating substrate

摘要

A novel twohyphen;laser technique has been investigated for recrystallizing polycrystalline silicon deposited on an insulating substrate. An Ar+laser and a CO2laser have been scanned simultaneously to perform the recrystallization of unpatterned samples and samples patterned with antireflection stripes. The use of the two beams enabled recrystallization without the use of a substrate heater, and resulted in grain widths a factor of 2 larger than those obtained with the more conventional technique using an Ar+laser only. A Raman microprobe analysis revealed that the stress in the twohyphen;beam recrystallized material was about an order of magnitude less than found in Ar+laser recrystallized material. The polarization dependence of the Raman scattered light indicated that the orientation of the recrystallized material between antireflection stripes was in a lang;100rang; orientation.