DXcenter analysis in Snhyphen;doped AlGaAs layer of double heterostructures

摘要

Capacitance as well as photovoltage methods have been used to analyze deep centers in annhyphen;type AlGaAs:Sn layer of double heterostructures. It is suggested that the trap with thermal activation energy equal to Dgr;E2=0.33plusmn;0.02 eV is associated with theLminimum of AlGaAs and could be interpreted as aDXcenter related to Sn. The observed changes of deep center concentration in double heterostructures are due to different Al contents within the depletion region.