Highly (0001)-oriented thin films of YMnO↓(3) were grown directly on Si substrates by chemical solution deposition. The crystallinity of the films was investigated by using x-ray diffraction: θ-2θ scan, rocking curve, and pole figure. Analysis of the x-ray photoelectron spectroscopy data and Rutherford backscattering spectroscopy spectrum showed that the films had ,a single phase of stoichiometric YMnO↓(3). The ferroelectric properties of YMnO↓(3) were investigated by measuring the temperature dependence of the capacitance-voltage characteristics in the metal/ferroelectric/ semiconductor structure. Screening of the ferroelectricity of YMnO↓(3) thin film at room temperature was discussed in conjunction with the charge effects, # 1998 American Institute of Physics, S0003-6951 (98)01433-8
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