Changes in surface structure for thin epitaxial Si layers (Siast;) grown on Si(100) below 500thinsp;deg;C using alternating exposures to Si precursors are presented. Two different methods for growing Siast; are compared, which involve a selfhyphen;limiting exposure to Si2Cl6followed by removal of the Cl layer with either Si2H6or atomic hydrogen. Scattering and recoiling spectroscopy is used to depth profile a N marker layer as Siast; is grown using Si2Cl6and Si2H6atTS=465thinsp;deg;C. The decrease in the N marker intensity proves that a Siast; film is grown, and reflection highhyphen;energy electron diffraction (RHEED) patterns show that the Siast; is epitaxial. RHEED patterns from Siast; grown using alternating exposures of Si2Cl6and atomic hydrogen are nearly identical to clean Si(100), again indicating epitaxial growth. Both methods suppress formation of threehyphen;dimensional islands, which are observed for Si growth from Si2H6belowTS=600thinsp;deg;C.
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