Comment on rsquo;rsquo;Capacitancehyphen;voltage measurements in amorphous Schottky barriersrsquo;rsquo;

摘要

The bandhyphen;bending potential profileV(x) in the spacehyphen;charge region of an amorphous semiconductor moves regidly in thexdirection, with increased bias, irrespective of the form of the density of localized statesN(E). A recent paper by Singh and Cohen lsqb;J. Appl. Phys. 51, 413 (1980)rsqb; which suggest this is not true is incorrect in this point. This property leads to simplified schemes for the analysis ofChyphen;Vmeasurements and fieldhyphen;effect conductance measurements.