首页> 外文期刊>journal of applied physics >Weak‐field magnetoresistance skewness and galvanomagnetic measurements on the (001)‐plane of n‐type Ge single crystal
【24h】

Weak‐field magnetoresistance skewness and galvanomagnetic measurements on the (001)‐plane of n‐type Ge single crystal

机译:n‐型Ge单晶(001)连字符平面上的弱连字符;场磁阻偏斜和电流磁测量

获取原文
获取外文期刊封面目录资料

摘要

Weak‐field galvanomagnetic measurements were carried out at room temperature on a (001)‐circular flat sample of ann‐type Ge single crystal using the Van der Pauw‐Wasscher technique, with the magnetic field parallel and normal to the sample plane. Thus, the anisotropy which appears in the (001)‐plane of cubic crystals due to the magnetic field is investigated and the existence of the magnetoresistance skewness effect is established experimentally. This effect allows the determination of all the galvanomagnetic coefficients in a simple way. The new result concerning Ge is the negative sign of the rgr;1212coefficient which is attributed to the reverse rotation of the magnetoresistance.
机译:在室温下,使用Van der Pauw‐Wasscher技术对ann‐型Ge单晶的(001)‐圆形扁平样品进行弱&连字符;场电流磁测量,磁场平行并垂直于样品平面。因此,研究了立方晶体(001)&连字符平面中由于磁场作用而出现的各向异性,并通过实验建立了磁阻偏斜效应的存在.这种效应允许以简单的方式确定所有电流磁系数。关于Ge的新结果是&rgr;1212系数的负号,这归因于磁阻的反向旋转。

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号