Reduction in dislocation density in In‐doped GaP LPE layers grown from indium solvent

摘要

A reduction in dislocation density, typically by a factor of 3–8, was observed across the interface between LEC GaP (111)B substrate and ann‐type In‐doped GaP layer grown from indium solvent by liquid‐phase epitaxy. Doping of the epitaxial layer with indium contributed to the reduction in dislocation density in the epitaxial layer.