...
首页> 外文期刊>journal of applied physics >Raman and highhyphen;pressure photoluminescence studies on porous silicon
【24h】

Raman and highhyphen;pressure photoluminescence studies on porous silicon

机译:Raman and highhyphen;pressure photoluminescence studies on porous silicon

获取原文

摘要

We show that there is no correlation between the blue shift of the visible photoluminescence band and red shift of the Raman phonon line in porous silicon, in contrast to the recently reported results. We also report a drastic red shift of the photoluminescence peak position with pressure up to 6 GPa and show that this is much larger than that of the crystalline silicon. These observations cast doubt on the suggested mechanism of quantum size effects in porous silicon.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号