Valence band splittings and band offsets of AlN, GaN, and InN

摘要

Firsthyphen;principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystalhyphen;field splitting parameters Dgr;CFof minus;217, 42, and 41 meV, respectively, and spinndash;orbit splitting parameters Dgr;0of 19, 13, and 1 meV, respectively. In the zinc blende structure Dgr;CFequiv;0 and Dgr;0are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions. copy;1996 American Institute of Physics.