Effect of α-HgI↓(2) epitaxial growth on the defect structure of CdTe:Ge substrates

摘要

The α-HgI↓(2)/CdTe:Ge heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The α-HgI↓(2) expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending up to about 500 μm from the α-HgI↓(2)/CdTe:Ge interface. CL spectra of the layer reveal the appearance of a band related to tellurium vacancies as well as the decrease of the emission attributed to defect complexes involving Ge. The data obtained indicate that Ge-impurity gettering and V↓(Te) generation at the interface take place during α- HgI↓(2) epitaxial growth. #1997 American Institute of Physics. S0003-6951 (97)02807-6