Optical studies of misfit strain effects in GaxIn1minus;xP epitaxial layers on (001) GaAs substrates

摘要

The effect of interfacial elastic strain due to lattice mismatch in GaxIn1minus;xP layers grown on (001) GaAs substrates by atmospheric pressure metalorganic vaporhyphen;phase epitaxy has been studied by photoluminescence and photoluminescence excitation spectroscopy. Strong excitonic features have been observed in the 2hyphen;K excitation spectra. They provide the first direct observation of the valencehyphen;band splitting due to the misfit strain in accordance with theoretical calculations.