Small angle x-ray scattering for sub-100 nm pattern characterization

摘要

Characterization of sub-100 nm photolithographic patterns with nanometer scale resolution is demonstrated using small angle x-ray scattering. The transmission scattering geometry employed potentially enables high throughput measurements for future technology nodes of the semiconductor industry, organic and inorganic nanoscale devices, and three-dimensional structures. The method is demonstrated through the characterization of a series of polymer photoresist gratings using a synchrotron x-ray source. Quantities, such as periodicity and line width, are extracted using minimal modeling. Additional quantities and the potential of a laboratory-based x-ray system are briefly discussed.