Highhyphen;quality reproducible Pb oxide tunneling barriers have been grown using thermal oxidation methods. Junctions were made over a conductance range of 104(OHgr;thinsp;cm2)minus;1by accurately controlling the humidity in a flow of roomhyphen;temperature oxygen. An inspection of theIhyphen;Vcharacteristics in the regioneV2Dgr; at low temperatures indicates extremely highhyphen;quality barriers with no nontunneling processes shunting the tunneling process.
展开▼