Space‐charge‐limited current effects inn‐type CuInSe2/Au Schottky diodes

摘要

Schottky diodes, fabricated by evaporating thin films of Au onton‐type single crystals of CuInSe2have been shown to exhibit space‐charge‐limited current effects under foward bias. The observed characteristics are associated with the presence of a high‐resistivity layer close to the metal contact.