Reactions upon rapid thermal annealing of sputtered Tihyphen;Si multilayers have been studied by crosshyphen;section and throughhyphen;foil transmission electron microscopy, glancinghyphen;angle Rutherford backscattering, and xhyphen;ray diffraction. The compositions of the samples are 40 at.thinsp;percnt; Ti, 60 at.thinsp;percnt; Si and 60 at.thinsp;percnt; Ti, 40 at.thinsp;percnt; Si, and the bilayer periodicity is about 10 nm. The silicon layers in the ashyphen;deposited films are amorphous; the titanium layers are polycrystalline hcp. After a 30hyphen;s anneal at 455thinsp;deg;C, significant interdiffusion occurs and we observed the formation of an amorphous Tihyphen;Si alloy by interfacial reaction. The metastable disilicide, C49 TiSi2, nucleated along with a small amount of TiSi in the sample with higher silicon content (60percnt;) upon annealing at 550thinsp;deg;C for 10 s, but the amorphous alloy remained as the only product of reaction in the 40hyphen;at.thinsp;percnt; Si sample.
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