Improved characterization of polycrystalline silicon film, by resonant Raman scattering

摘要

In this article, we report the results showing the usefulness of resonant Raman scattering to study polycrystalline silicon films, in complement to conventional Raman spectrometry. In addition to a strong enhancement of the Raman signal ofcrystalline silicon, the low probing depth of the UV light used in such experiments allows one to investigate very thin films and more generally near-surface regions.