We have performed a detailed investigation of TiN contacts onnhyphen;type silicon. The barrier height was found to be 0.49plusmn;0.01 V and the contact resistivity on 0.001hyphen;OHgr;thinsp;cm substrates below 10minus;4OHgr;thinsp;cm2. The TiN layers were produced by reactive sputtering. The resistivity of the layers depends on the partial pressure of N2in the N2+Ar sputtering gas mixture. A minimum of 55 mgr;OHgr;thinsp;cm was obtained, which is below the resistivity of pure Ti films. Finally, we have developed two etching solutions which allow patterning of TiN layers using conventional photolithography techniques.
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