Electronic properties of various single crystals of CdIn2Te4have been investigated, and more particularly the static dielectric constant egr;r. This material is usually known to have a very large dielectric constant, values as large as 200ndash;265 are frequently claimed. Two methods were used to study egr;r. One is based on the direct measurement of the capacitance of a In/CdIn2Te4/In structure and a second one uses a Schottky diode. In this latter case, the egr;rvalue is deduced with the help of the Hall measurements. From our measurements the dielectric constant would be much smaller than 200ndash;265, it is estimated to about 11. Finally our results are compared with those obtained by optical measurements.
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