The conduction mechanism in silicon nitride films

摘要

A simple analytical model for the conduction mechanism in silicon nitride films is proposed. The model is based on double injection, trap spacehyphen;chargehyphen;limited current, and internal recombination. The Poolehyphen;Frenkel behavior arises from the Frenkel behavior of one of the traps responsible for the space charge. The model was shown to agree with experimental results on the thickness dependence of the currenthyphen;voltage characteristic, to be compatible with MNOS device models, and to agree with observations of twohyphen;carrier conduction at the negative electrode.