Noisehyphen;equivalent power in highly doped infrared Schottkyhyphen;barrier diodes without substrate

摘要

The noisehyphen;equivalent power of heavily doped infrared silicon Schottkyhyphen;barrier diodes is calculated for the case in which the substrate has been eliminated. Assuming an antenna radiation resistanceRa=100 OHgr; and minimizingPeqat lgr;=10 mgr;m for an impurity concentration of 1019/cm3yieldsPeq=10minus;12W/Hz1/2for the detector andPeq=4.8times;10minus;17W/Hz for the mixer.