Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide

摘要

The effects of gamma-ray (y-ray) irradiation on the channel mobility of enhancement-type n-channel 6H silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) with gate oxides annealed in a hydrogen atmosphere after pyrogenic oxidation were studied. Irradiation induced interface traps produced in the MOSFETs were evaluated using the associated change in the subthreshold-current curve. It was found that the MOSFET channel mobility depended on the net number of radiation-induced interface traps. By a detailed comparison with the radiation response of silicon MOSFETs, 6H-SiC MOSFETs are shown to exhibit a channel mobility with a much higher radiation resistance.