Calculated temperature dependence of threshold current of GaAshyphen;AlxGa1minus;xAs double heterostructure lasers

摘要

The threshold current densityJth(T) of the GaAshyphen;AlxGa1minus;xAs double heterostructure laser is calculated by including both drift and diffusion mechanism for carrier leakage. Forx0.25 (Dgr;Eg0.3 eV),Jthincreases rapidly with further decrease in the aluminum fractionxin the ternary layers, in general agreement with previous work. The ratioJth(70thinsp;deg;C)/Jth(22thinsp;deg;C) also increases rapidly forx0.25. The carrier concentration in thePternary is an important quantity in determining both the temperature dependence of threshold as well as roomhyphen;temperature threshold. In order to achieve aT0gsim;150 K forx=0.28, thePhyphen;ternary carrier concentration should be greater than 1.5times;1017cmminus;3.