Localization at imperfect interfaces and its role in optical spectra of quantum well structures

摘要

We present microscopic calculations that show that some of the novel features recently found in the luminescence spectra of quantum well structures (e.g., Sihyphen;SiGe, GaAshyphen;GaAlAs, ZnSehyphen;ZnCdSe) can be accounted for by electron localization at small interface islands.