Annealing of interface states on oxidized silicon during chip bonding

摘要

Interface states, originating from the dangling bonds at the oxidehyphen;silicon interface, can be annealed out during chip bonding between 85 and 380thinsp;deg;C in aluminumhyphen;gate metalhyphen;oxidehyphen;silicon capacitors with a thermal activation energy of 0.15plusmn;0.02 eV. Annealing is absent in siliconhyphen;gate capacitors. These results suggest that the interface states are annealed out by hydrogenation of the silicon and oxygen dangling bonds and that hydrogen diffusion through the oxide is the ratehyphen;limiting mechanism.