Direct determination of atomic structure in multiple quantum wells InGaN/GaN

摘要

We present an analysis of a homogeneous cellular interface between ultrathin InGaN and GaN layers in a high-resolution high-angle annular dark field scanning transmission electron microscopy image processed by the deconvolution technique. The method provides high-quality atomic-resolved images uniquely from the experimental images without preassumed models and image simulations. The processed image, then, shows definitely the position of interface between InGaN and GaN layers at atomic scale and an evidence of coherent epitaxial growth.