We have performed GaxIn1minus;xP liquid phase epitaxial (LPE) growth on (100) GaAs substrates at a growth temperature of 785thinsp;deg;C. The P atom fraction in the growth melts was kept constant every LPE growth run. The lattice mismatch Dgr;aperp;/a0between the GaxIn1minus;xP layer and GaAs substrate normal to the wafer surface and photoluminescence (PL) of the alloy layer were measured. It was found that Dgr;aperp;/a0and the PL peak energy vary linearly from +0.47 to minus;0.13percnt; and from 1.869 to 1.921 eV at room temperature, depending on the Ga atom fraction in the growth melts, respectively. This means that the sohyphen;called composition pulling phenomenon does not occur in LPE growth of GaxIn1minus;xP on (100) GaAs substrates.
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