Comparison of cw laserhyphen;annealed and electronhyphen;beam annealed Si

摘要

Si samples implanted with As+have been annealed with a modified commercial scanning electron microscope and with a scanning cw Ar+laser. A comparison of these two techniques is presented, using electronhyphen;beamhyphen;induced current as a probe of minorityhyphen;carrier effects. With a minimum of parameter optimization, it is found that electronhyphen;beam annealing is usually superior to laser annealing with respect to both lateral and vertical uniformity.