Scaling the Si metalhyphen;oxidehyphen;semiconductor fieldhyphen;effect transistor into the 0.1hyphen;mgr;m regime using vertical doping engineering

摘要

Conventional scaling of the Si MOSFET into the deep submicron regime requires high substrate doping levels. This extracts a severe speed penalty, if lower standby power consumption (i.e., good subthreshold behavior) is to be maintained. We explore the scaling of fully depleted siliconhyphen;onhyphen;insulator (SOI) structures, and show, both analytically and by numerical simulation, how thehorizontalleakageis controlled byverticaldopingengineering. Our analysis allows different structures to be evaluated in terms of a natural length scale indicating good subthreshold behavior. Finally, we describe howretrogradedopingmay be used to mimic the SOI concept in bulk Si. Our results show good subthreshold behavior in the deep submicron regime can be achieved without large junction capacitance, high threshold voltage, or heavy channel doping. thinsp;