Analytical modeling ofahyphen;Si:H thinhyphen;film transistors

摘要

Accurate analytical expressions have been derived, from basic principles, for the sheet conductance of thenhyphen;channelahyphen;Si:H thinhyphen;film transistors. The basic principles apply two different energy band models, one for theahyphen;Si bulk and one for theahyphen;Sindash;SiO2interface. The physical parameters needed for the model are easily obtained from an experimental sheet conductance versus the gate voltage curve. The basic expressions for the sheet conductance are then simplified and result in two sets of simple formulas which are employed in the calculation of theIDvsVDcharacteristics.