Identification of hole transitions at the neutral interstitial manganese center in silicon

摘要

The observation of a sharp line transmission spectrum in Mnhyphen;doped silicon is reported. Isochronal annealing behavior of both the line spectrum and the interstitial Mn center as determined by electron paramagnetic resonance is shown to be in excellent agreement. The temperature dependence of the spectrum is explained by the population of a local phonon mode in the initial state of the transitions. The spectrum is tentatively assigned to boundhyphen;tohyphen;bound hole transitions at the neutral interstitial Mn center.