Correlation between the photoreflectance impurity peak in semi‐insulating GaAs and the bulk acceptor concentration

摘要

We have measured the strength of the first‐derivative peak observed below the band gap in photoreflectance spectra of semi‐insulating GaAs and found that it is correlated with the bulk residual acceptor concentration. The apparent energy separation of the impurity peak is not fixed, but varies from sample to sample.