Nd:YAG laser annealing of arsenichyphen;implanted silicon: Relaxation of metastable concentrations by means of CO2hyphen;laser irradiation

摘要

The relaxation of supersaturated arsenic concentrations resulting from Nd:YAG laser annealing of implanted silicon was investigated, using a thermal posthyphen;treatment with a stationary 40hyphen;W CO2minus;laser beam. It was found that the relaxation time constant is sim;12 min at 700 deg;C and sim;20 min at 600 deg;C.