Removal of the highhyphen;resistivity layer at thenonn+liquid phase epitaxial GaAs layerhyphen;substrate interface by controlledinsituetchhyphen;back

摘要

A highhyphen;resistivity layer often forms at the gallium arsenide layerhyphen;substrate interface following preepitaxial growth heat treatment and subsequent layer growth. Aninsituetchhyphen;back technique was developed for use on the substrate which resulted in the removal of the highhyphen;resistivity interfacial layer. This simple technique yielded reproducible etchhyphen;back versus time control and thus controllable removal of the highhyphen;resistivity layer.