Barrier height of Re and Os contacts tonhyphen;silicon

摘要

Barrier heights between ashyphen;deposited (300thinsp;deg;C substrate temperature) Schottky contacts between Re and Os, and lang;100rang;nhyphen;Si have been measured, by photoelectric response and analysis of forwardIhyphen;Vdata to 0.77 eV for Re, and 0.85 eV for Os. The trend of barrier heights for the 5dseries elements, Hfhyphen;Tahyphen;Whyphen;Rehyphen;Oshyphen;Irhyphen;Pthyphen;Au is discussed and compared with quantities which have been correlated with the value of the barrier height,viz. work function, electronegativity, and heat of formation for the appropriate silicide. The comparison gives some preference for the simple correlation with work function.