Defect studies in multilayer epitaxial GaAs by transient capacitance

摘要

Majorityhyphen;carrier defects, induced by 1hyphen;MeVhyphen;electron irradiation innhyphen;type epitaxial GaAs were studied by deephyphen;levelhyphen;trap spectroscopy. The samples were fabricated in the form of FEThyphen;like devices on the epitaxial active and buffer layers. Anomalies in the DLTS response such as the appearance of double peaks, a rapid growth of transient response, and lack of exponential behavior as the depletion width extends into the buffer are discussed in terms of the planar geometry, the series resistance, and the multilayer nature of the devices.