Characterization of crystal defects at leakage sites in chargehyphen;coupled devices

摘要

Crystal defects have been identified at the sites of high leakage (spikes) in chargehyphen;coupled devices operated in the integration mode. Oxidationhyphen;induced stacking faults and dislocations were observed using xhyphen;ray topography and selective etching, and identified by transmission electron microscopy. Electrical measurements showed that the stacking faults had a range of activity which is attributed to variation in the level of impurity decoration of the defects.