Ion beam induced luminescence in natural diamond

摘要

We used ion beam induced luminescence (IBIL) to study the evolution of damage during ion implantation of natural type‐IIa diamond with 30 keV carbon ions, for different sample temperatures in the range 35–300 K. Blue band‐A luminescence decays with irradiation dose from an initial value of ∼10−3photons/e‐hpair. This decay was modeled to obtain an effective damage cross section of ∼40 A˚2, which is roughly independent of temperature. We explored the use of IBIL as a tool to characterize the processing ofp‐njunctions in natural type‐IIb diamond and apply it to find conditions that determine the ultraviolet response of light‐emitting diodes.