Nanoscale organic transistors based on self-assembled monolayers

摘要

A device structure is reported for the fabrication of nanoscale organic transistors. In this structure, a self-assembled monolayer is used to define the channel length, as well as acting as the semiconducting material. High current modulation and high current output are demonstrated with 4,4′-dithiolbiphenylene. Various dielectric materials, such as SiO_(2), Al_(2)O_(3), and a self-assembled silane monolayer, have been shown to result in high-performance transistors. Finally, nanopatterning can also be achieved by using an insulating alkanethiol to define the channel length of a conventional organic field-effect transistor.