Hot electrons in a GaAs heterolayer at low temperature

摘要

The theory of hot electrons is developed for highhyphen;mobility GaAs heterolayers at low temperature, where the electron system is twohyphen;dimensionally itinerant with a highly degenerate distribution, and the scattering is predominantly elastic. The inelastic scattering which controls the electron heating is by acoustichyphen;mode phonons, with both deformation and piezoelectric coupling to the electrons. Both lsquo;lsquo;equipartitionrsquo;rsquo; and lsquo;lsquo;Blochrsquo;rsquo; temperature ranges are considered. The assumption of an electron temperature, for the hot distribution, is critically investigated.