Channeling study of local distortion in indiumhyphen;doped semihyphen;insulating GaAs

摘要

The local distortion in the indiumhyphen;doped semihyphen;insulating GaAs has been evaluated by means of ion channeling experiments along three directions for various indium concentrations up to 6.3times;1020/cm3. The local distortion due to the indium doping gradually increases with the indium concentration, accompanied by the increase in minimum yield along the lang;100rang;, lang;110rang;, and lang;111rang; axes. The increase of the local distortion is independent of the crystal growth method.