Study of thermally induced deep levels in Al doped Si

摘要

Deep levels in heathyphen;treated aluminumhyphen;doped silicon were observed using thermally stimulated capacitance measurements. Three hole traps (1012ndash;1014centers/cm3) atEV+216 meV,EV+316 meV, andEV+402 meV, and an electron trap (1013centers/cm2) atECminus;389 meV were observed. Concentration profiles of these centers were measured and a comparison with levels observed in electronhyphen;irradiated and Alhyphen;doped Si was made.