High‐reflectivity GaAs‐AlGaAs mirrors: Sensitivity analysis with respect to epitaxial growth parameters

摘要

High‐reflectivity multilayer structures, consisting of a periodic stack of quarter‐wavelength GaAs and AlGaAs layers, have been investigated concerning their optical behavior with respect to various deficiencies in the epitaxial growth process. Theoretical curves are compared with experimental ones from structures grown by metalorganic chemical vapor deposition. These layer structures are also shown to be useful in the characterization of thickness uniformity of an epitaxial growth process.