首页> 外文期刊>journal of applied physics >Impurity scattering limited mobility in a quantum well heterojunction
【24h】

Impurity scattering limited mobility in a quantum well heterojunction

机译:杂质散射限制了量子阱异质结中的迁移率

获取原文
获取外文期刊封面目录资料

摘要

We calculate the mobility of carriers in a quantum well structure when they are scattered by ionized impurities in the size‐quantum limit (SQL) where the carriers are assumed to populate only the lowest quantized energy level. It is found that the probability of scattering due to ionized impurities decreases with the well thickness in contrast to the case of acoustic phonon scattering where the scattering probability is enhanced under the conditions of the SQL. The temperature and thickness dependence of the mobility depends critically on the screening of the Coulomb potential due to the presence of the ionized impurities.
机译:我们计算了量子阱结构中载流子在大小&连字符量子极限 (SQL) 中被电离杂质散射时的迁移率,其中假设载流子仅填充最低的量子化能级。结果表明,电离杂质引起的散射概率随着阱厚度的增加而降低,而声声子散射的情况则在SQL条件下散射概率增强。由于电离杂质的存在,迁移率的温度和厚度依赖性主要取决于库仑电位的筛选。

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号