Laser annealing of silicon on sapphire

摘要

Silicon‐implanted silicon‐on‐sapphire wafers have been annealed by 50‐ns pulses from aQ‐switched Nd : YAG laser. The samples have been analyzed by channeling and by ohgr;‐scan x‐ray double diffraction. After irradiation with pulses of a fluence of about 5 J cm−2the crystalline quality of the silicon layer is found to be better than in the as‐grown state.